Xa ii-electron kunye nemingxunya ziphinda zidityaniswa, zinokukhupha ukukhanya okubonakalayo, ngoko zinokusetyenziselwa ukwenza ii-diode ezikhupha ukukhanya.Isetyenziswe njengezibane zesalathisi kwiisekethe kunye nezixhobo, okanye zenziwe ngokubhaliweyo okanye imiboniso yedijithali.I-Gallium arsenide diode ikhupha ukukhanya okubomvu, i-gallium phosphide diode ikhupha ukukhanya okuluhlaza, i-silicon carbide diode ikhupha ukukhanya okutyheli, kunye ne-gallium nitride diode ikhupha ukukhanya okuluhlaza.Ngenxa yeepropathi zekhemikhali, yahlulwe ibe yi-organic light-emitting diode i-OLED kunye ne-inorganic light-emitting diode LED.

Iidiode ezikhupha ukukhanya ngokuqhelekileyo zisetyenziselwa izixhobo ezikhupha ukukhanya ezikhupha amandla ngokudityaniswa kwakhona kwee-electron kunye nemingxuma yokukhupha ukukhanya.Zisetyenziswa ngokubanzi kwintsimi yokukhanyisa.[1] I-Light-emitting diodes inokuguqula ngokufanelekileyo amandla ombane kumandla okukhanya kwaye ibe noluhlu olubanzi lokusetyenziswa kuluntu lwanamhlanje, olufana nokukhanyisa, iipaneli ezisicaba kunye nezixhobo zonyango.[2]

Olu hlobo lwezixhobo ze-elektroniki lwavela kwangoko ngo-1962. Kwiintsuku zokuqala, babekwazi ukukhupha ukukhanya okubomvu okukhanyayo.Kamva, kwaveliswa ezinye iinguqulelo zemonochromatic.Ukukhanya okunokukhutshwa namhlanje kuye kwasasazeka ekukhanyeni okubonakalayo, ukukhanya kwe-infrared kunye ne-ultraviolet, kwaye ukukhanya kuye kwanda kakhulu.Ukukhanya.Ukusetyenziswa kwakhona kusetyenziswe njengezibane zesalathisi, iipaneli zokubonisa, njl.;kunye nokuqhubela phambili kweteknoloji, iidiode ezikhupha ukukhanya zisetyenziswe ngokubanzi kwimiboniso kunye nokukhanyisa.

Njengama-diode aqhelekileyo, ii-diode ezikhupha ukukhanya zenziwe nge-PN junction, kwaye nazo zine-conductivity ye-unidirectional.Xa i-voltage yangaphambili isetyenziswe kwi-diode ekhupha ukukhanya, imingxuma efakwe kwindawo ye-P ukuya kwindawo ye-N kunye nee-electron ezifakwe kwindawo ye-N ukuya kwindawo ye-P ngokulandelanayo zidibene nee-electron kwindawo ye-N kunye ne-voids. kwindawo ye-P ngaphakathi kwee-microns ezimbalwa ze-PN junction.Imingxunya iphinda idibane kwaye ivelise i-fluorescence ephuma ngokukhawuleza.Amandla ee-electron kunye nemingxuma kwizinto ezahlukeneyo ze-semiconductor zihlukile.Xa ii-electron kunye nemingxuma ziphinda zidibana, amandla akhutshwayo ahluke.Okukhona amandla akhutshwayo, kokukhona bufutshane ubude bokukhanya okukhutshiweyo.Ngokuqhelekileyo zisetyenziselwa iidiode ezikhupha ukukhanya okubomvu, okuluhlaza okanye okuphuzi.I-voltage ye-reverse breakdown ye-diode ekhupha ukukhanya inkulu kune-5 volts.Igophe layo langaphambili le-volt-ampere lingumnqantsa kakhulu, kwaye kufuneka lisetyenziswe kuthotho kunye ne-current-limiting resistor ukulawula umsinga ngediode.

Inxalenye engundoqo ye-diode ekhupha ukukhanya yi-wafer eyenziwe yi-P-type semiconductor kunye ne-N-type semiconductor.Kukho umaleko wenguqu phakathi kwe-P-type semiconductor kunye ne-N-type semiconductor, ebizwa ngokuba yi-PN junction.Kwi-PN ye-junction yezinto ezithile ze-semiconductor, xa abathwali abancinci be-injected kunye nabaninzi abathwali badibanisa kwakhona, amandla angaphezulu akhululwa ngendlela yokukhanya, ngokuguqula ngokuthe ngqo amandla ombane kumandla okukhanya.Nge-voltage ye-reverse esetyenziswe kwi-PN junction, kunzima ukujova abathwali abancinci, ngoko ayikhuphi ukukhanya.Xa ikwisimo esihle sokusebenza (oko kukuthi, i-voltage esebenzayo isetyenziswe kuzo zombini iziphelo), xa i-current iphuma kwi-anode ye-LED ukuya kwi-cathode, i-crystal semiconductor ikhupha ukukhanya kwemibala eyahlukeneyo ukusuka kwi-ultraviolet ukuya kwi-infrared.Ukuqina kokukhanya kuhambelana nomsinga.