Kwiminyaka ye-1960, abasebenzi bezenzululwazi kunye nobuchwepheshe baphuhlisa i-LED ukukhanya-emitting diodes usebenzisa umgaqo we-semiconductor PN junction light-emitting.I-LED ephuhliswe ngelo xesha yenziwe nge-GaASP, kwaye umbala wayo wawubomvu.Emva kweminyaka ephantse ibe yi-30 yophuhliso, i-LED eyaziwayo inokukhupha umbala obomvu, orenji, omthubi, oluhlaza, oluhlaza okwesibhakabhaka neminye imibala.Nangona kunjalo, ii-LED ezimhlophe zokukhanyisa zaphuhliswa kuphela emva kwe-2000. Apha, abafundi baziswa kwii-LED ezimhlophe zokukhanyisa.

phuhlisa

Umthombo wokukhanya we-LED wokuqala owenziwe nge-semiconductor ye-PN ye-junction light-emitting principle yaphuma ekuqaleni koo-1960.Izinto ezisetyenziswa ngelo xesha yi-GaAsP, ekhupha ukukhanya okubomvu (λp=650nm).Xa i-drive current i-20 mA, i-flux ekhanyayo ingamawaka ambalwa e-lumens, kunye nokusebenza okukhanyayo okuhambelanayo malunga ne-0.1 lumen / watt.

Phakathi kwiminyaka yoo-1970s, izinto ezingaphakathi kunye no-N zaziswa ukwenza ii-LED zivelise ukukhanya okuluhlaza (λp=555nm), ukukhanya okutyheli (λp=590nm) kunye nokukhanya oku-orenji (λp=610nm), kunye nokusebenza okukhanyayo kuye kwandiswa ukuya kwi-1. ilume/watt.

Ekuqaleni kwe-1980, imithombo yokukhanya ye-LED ye-GaAlAs yavela, eyenza ukukhanya okukhanyayo kwee-LED ezibomvu kufikelele kwi-lumens ye-10 / watt.

Ekuqaleni kwe-1990, izinto ezimbini ezitsha, i-GaAlInP, ekhupha ukukhanya okubomvu nokuphuzi, kunye ne-GaInN, ekhupha ukukhanya okuluhlaza kunye nohlaza okwesibhakabhaka, yaphuhliswa ngempumelelo, eyaphucula kakhulu ukusebenza okukhanyayo kwee-LED.

Kwi-2000, ukuphumelela okukhanyayo kwee-LED ezenziwe zangaphambili zafikelela kwi-lumens ye-100 nge-watt kwiindawo ezibomvu kunye ne-orange (λp = 615nm), ngelixa ukukhanya okukhanyayo kwee-LED ezenziwe ngokugqibela kwindawo eluhlaza (λp = 530nm) inokufikelela kuma-lumens angama-50./watt.